Invention Grant
US09076550B2 Test circuit for testing refresh circuitry of a semiconductor memory device
有权
用于测试半导体存储器件的刷新电路的测试电路
- Patent Title: Test circuit for testing refresh circuitry of a semiconductor memory device
- Patent Title (中): 用于测试半导体存储器件的刷新电路的测试电路
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Application No.: US13720319Application Date: 2012-12-19
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Publication No.: US09076550B2Publication Date: 2015-07-07
- Inventor: Jong Ho Son , Yong Ju Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2012-0069387 20120627
- Main IPC: G11C11/40
- IPC: G11C11/40 ; G01K7/42 ; G11C11/406 ; G11C29/50 ; G11C29/56 ; G11C11/41

Abstract:
A test circuit of a semiconductor apparatus includes a test temperature information generation section, an erroneous operation prevention unit, and a refresh cycle adjustment unit. The test temperature information generation section outputs test temperature information having a plurality of bits in a test operation mode, and irregularly changes logic values of the plurality of bits and transition time points of the logic values. The erroneous operation prevention unit generates a temperature compensation signal in response to the test temperature information. The refresh cycle adjustment unit changes a cycle of a reference refresh signal in response to the temperature compensation signal, and generates a refresh signal.
Public/Granted literature
- US20140003161A1 SEMICONDUCTOR APPARATUS AND TEST CIRCUIT THEREOF Public/Granted day:2014-01-02
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