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US09076550B2 Test circuit for testing refresh circuitry of a semiconductor memory device 有权
用于测试半导体存储器件的刷新电路的测试电路

Test circuit for testing refresh circuitry of a semiconductor memory device
Abstract:
A test circuit of a semiconductor apparatus includes a test temperature information generation section, an erroneous operation prevention unit, and a refresh cycle adjustment unit. The test temperature information generation section outputs test temperature information having a plurality of bits in a test operation mode, and irregularly changes logic values of the plurality of bits and transition time points of the logic values. The erroneous operation prevention unit generates a temperature compensation signal in response to the test temperature information. The refresh cycle adjustment unit changes a cycle of a reference refresh signal in response to the temperature compensation signal, and generates a refresh signal.
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