A nonvolatile memory cell array is divided into first and second cell arrays, the page buffer circuit is arranged between the first and second cell arrays, a second latch circuit is arranged by the outside edge section of the first cell array, and the page buffer circuit is connected to the second latch circuit via a global bit line of the first cell array. The data writing to the first or second cell array is controlled by transmitting the writing data to the page buffer circuit via the global bit line from the second latch circuit, after the writing data is latched in the second latch circuit. The data reading of outputting the data read from the first or second cell array to the external circuit is controlled by transmitting data to the second latch circuit from the page buffer circuit via the global bit line.