Invention Grant
US09076529B2 Level shift circuit and semiconductor device using level shift circuit
有权
电平移位电路和使用电平移位电路的半导体器件
- Patent Title: Level shift circuit and semiconductor device using level shift circuit
- Patent Title (中): 电平移位电路和使用电平移位电路的半导体器件
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Application No.: US13549204Application Date: 2012-07-13
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Publication No.: US09076529B2Publication Date: 2015-07-07
- Inventor: Akira Ogawa
- Applicant: Akira Ogawa
- Applicant Address: TW Hsin-Chu
- Assignee: POWERCHIP TECHNOLOGY CORP.
- Current Assignee: POWERCHIP TECHNOLOGY CORP.
- Current Assignee Address: TW Hsin-Chu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: JP2012-067561 20120323
- Main IPC: H03K19/094
- IPC: H03K19/094 ; G11C16/06 ; G11C16/30 ; G11C7/10

Abstract:
A level shift circuit, for outputting a data output signal with a second level via an output inverter after a data input signal with a first level is stored in a latch, includes a level set circuit, when the output data signal outputs with a low level, setting the output data signal to a low level in response to a change of the input data signal. The level set circuit is connected to an output terminal of the output inverter, and has an NMOS transistor having a drain electrode and a source electrode coupled to a ground, wherein the NMOS transistor turns on in response to the input data signal with a high level.
Public/Granted literature
- US20130249595A1 LEVEL SHIFT CIRCUIT AND SEMICONDUCTOR DEVICE USING LEVEL SHIFT CIRCUIT Public/Granted day:2013-09-26
Information query
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