Invention Grant
US09075306B2 Chemically amplified negative resist composition and patterning process
有权
化学放大负光刻胶组合物和图案化工艺
- Patent Title: Chemically amplified negative resist composition and patterning process
- Patent Title (中): 化学放大负光刻胶组合物和图案化工艺
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Application No.: US13074680Application Date: 2011-03-29
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Publication No.: US09075306B2Publication Date: 2015-07-07
- Inventor: Takanobu Takeda , Tamotsu Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Akinobu Tanaka , Osamu Watanabe
- Applicant: Takanobu Takeda , Tamotsu Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Akinobu Tanaka , Osamu Watanabe
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2007-087243 20070329
- Main IPC: G03F7/038
- IPC: G03F7/038 ; G03F7/20
Abstract:
A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 μm, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.
Public/Granted literature
- US20110177464A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS Public/Granted day:2011-07-21
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