Invention Grant
US09055655B2 Conversion medium body, optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip
有权
转换介质体，光电子半导体芯片以及制造光电子半导体芯片的方法
- Patent Title: Conversion medium body, optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip
- Patent Title (中): 转换介质体，光电子半导体芯片以及制造光电子半导体芯片的方法
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Application No.: US13377593Application Date: 2010-08-10
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Publication No.: US09055655B2Publication Date: 2015-06-09
- Inventor: Bert Braune
- Applicant: Bert Braune
- Applicant Address: DE
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE
- Agency: DLA Piper LLP
- Priority: DE102009040148 20090904
- International Application: PCT/EP2010/061648 WO 20100810
- International Announcement: WO2011/026716 WO 20110310
- Main IPC: H01L33/50
- IPC: H01L33/50 ; H05B33/14 ; H05B33/10 ; H01L23/00
Abstract:
A method of producing an optoelectronic semiconductor chip includes providing a semiconductor layer sequence with at least one active layer, providing a one-piece conversion medium body, wherein a matrix material is incompletely crosslinked and/or cured, and wherein the conversion medium body exhibits at room temperature a hardness of Shore A 0 to Shore A 35 and/or a viscosity of 10 Pa·s to 150 Pa·s, placing the conversion medium body onto the semiconductor layer sequence such that they are in direct contact with one another, and curing the conversion medium body wherein after curing the hardness of the conversion medium body is Shore A 30 to Shore D 80.
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