Invention Grant
- Patent Title: Resistive memory device capable of preventing disturbance and method for manufacturing the same
- Patent Title (中): 能够防止干扰的电阻式存储装置及其制造方法
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Application No.: US13791468Application Date: 2013-03-08
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Publication No.: US09054304B2Publication Date: 2015-06-09
- Inventor: Seung Yun Lee , Hae Chan Park , Myoung Sub Kim , Sung Bin Hong , Se Ho Lee , Jung Won Seo
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: KR10-2012-0093232 20120824
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L45/00 ; H01L27/24
Abstract:
A resistive memory device capable of preventing disturbance is provided. The resistive memory device includes a lower electrode formed on a semiconductor substrate, a variable resistor disposed on the lower electrode, an upper electrode disposed on the variable resistor, and an interlayer insulating layer configured to insulate the variable resistor. The interlayer insulating layer may include an air-gap area in at least a portion thereof.
Public/Granted literature
- US20140054537A1 RESISTIVE MEMORY DEVICE CAPABLE OF PREVENTING DISTURBANCE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-02-27
Information query
IPC分类:
