Invention Grant
- Patent Title: Light emitting diode with high light extraction efficiency and method for manufacturing the same
- Patent Title (中): 具有高光提取效率的发光二极管及其制造方法
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Application No.: US13662525Application Date: 2012-10-28
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Publication No.: US09054288B2Publication Date: 2015-06-09
- Inventor: Chih-Jung Liu , Tzu-Chien Hung
- Applicant: Chih-Jung Liu , Tzu-Chien Hung
- Applicant Address: TW Hsinchu Hsien
- Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Current Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201210895332 20120330
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/60 ; H01L33/20 ; H01L33/62 ; H01L33/38 ; H01L33/42 ; H01L33/54 ; H01L33/44
Abstract:
A light emitting diode includes a light emitting structure, a transparent conductive layer and a transparent protecting layer formed in sequence. A plurality of holes are defined in the transparent protecting layer to expose the transparent conductive layer out of the transparent protecting layer. A plurality of micro-structures are formed on a top surface of the transparent conductive layer in the holes. The micro-structures refract light emitted from the light emitting structure and travelling through the transparent conductive layer.
Public/Granted literature
- US20130256702A1 LIGHT EMITTING DIODE WITH HIGH LIGHT EXTRACTION EFFICIENCY AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-10-03
Information query
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