Invention Grant
- Patent Title: Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
- Patent Title (中): 生长异质外延单晶或大晶粒半导体膜及其上的器件的方法
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Application No.: US12774465Application Date: 2010-05-05
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Publication No.: US09054249B2Publication Date: 2015-06-09
- Inventor: Praveen Chaudhari
- Applicant: Karin Chaudhari , Ashok Chaudhari , Pia Chaudhari
- Applicant Address: US NY Briarcliff Manor
- Assignee: Solar—Tectic LLC
- Current Assignee: Solar—Tectic LLC
- Current Assignee Address: US NY Briarcliff Manor
- Agency: Carter Ledyard & Milburn LLP
- Agent Keith D. Nowak; Libby Babu Varghese
- Main IPC: C30B25/02
- IPC: C30B25/02 ; H01L31/0392 ; C30B11/12 ; H01L21/02 ; C03C17/36 ; C23C14/02 ; C23C14/18 ; C23C14/58 ; H01L31/0236 ; H01L31/028 ; H01L31/0352 ; H01L31/068

Abstract:
A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.
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