Invention Grant
US09054249B2 Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon 有权
生长异质外延单晶或大晶粒半导体膜及其上的器件的方法

Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
Abstract:
A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.
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