Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13928425Application Date: 2013-06-27
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Publication No.: US09054201B2Publication Date: 2015-06-09
- Inventor: Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2009-296201 20091225
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/786 ; H01L21/84 ; H01L27/108 ; H01L27/11 ; H01L27/115 ; H01L27/118 ; H01L27/12 ; G11C16/04 ; G11C16/26

Abstract:
An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other.
Public/Granted literature
- US20130292677A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-11-07
Information query
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