Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14447045Application Date: 2014-07-30
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Publication No.: US09054039B2Publication Date: 2015-06-09
- Inventor: Hidenori Fujii
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Chiyoda-ku
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-068214 20110325
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/29 ; H01L23/31
Abstract:
A semiconductor device includes: a substrate; a lower wiring on the substrate; an inter-layer insulating film covering the lower wiring; first and second upper wirings on the inter-layer insulating film and separated from each other; and a semi-insulating protective film covering the first and second upper wirings, wherein the protective film is not provided in a region right above the lower wiring and between the first upper wiring and the second upper wiring.
Public/Granted literature
- US20140339674A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-11-20
Information query
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