Invention Grant
US09054036B2 Nitride semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer
有权
氮化物半导体器件，氮化物半导体晶片和形成氮化物半导体层的方法
- Patent Title: Nitride semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer
- Patent Title (中): 氮化物半导体器件，氮化物半导体晶片和形成氮化物半导体层的方法
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Application No.: US13780456Application Date: 2013-02-28
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Publication No.: US09054036B2Publication Date: 2015-06-09
- Inventor: Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-255290 20121121
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/267 ; H01L33/32 ; H01L21/02
Abstract:
According to one embodiment, a nitride semiconductor device includes a stacked body and a functional layer. The stacked body includes an AlGaN layer of AlxGa1-xN (0
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