Invention Grant
- Patent Title: Double density semiconductor fins and method of fabrication
- Patent Title (中): 双密度半导体散热片及其制造方法
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Application No.: US13686969Application Date: 2012-11-28
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Publication No.: US09054020B2Publication Date: 2015-06-09
- Inventor: Hong He , Chiahsun Tseng , Chun-Chen Yeh , Yunpeng Yin
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Howard M. Cohn; H. Daniel Schnurmann
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L29/16 ; H01L21/308
Abstract:
Methods and structures having increased fin density are disclosed. Structures with two sets of fins are provided. A lower set of fins is interleaved with an upper set of fins in a staggered manner, such that the lower set of fins and upper set of fins are horizontally and vertically non-overlapping.
Public/Granted literature
- US20140145295A1 DOUBLE DENSITY SEMICONDUCTOR FINS AND METHOD OF FABRICATION Public/Granted day:2014-05-29
Information query
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