Invention Grant
- Patent Title: Semiconductor device having a contact pattern electrically connecting at least three conductive layers
- Patent Title (中): 具有电连接至少三个导电层的接触图案的半导体器件
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Application No.: US12183119Application Date: 2008-07-31
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Publication No.: US09053985B2Publication Date: 2015-06-09
- Inventor: Tsutomu Tanaka , Yasuhiro Yamada , Hirohisa Takeda
- Applicant: Tsutomu Tanaka , Yasuhiro Yamada , Hirohisa Takeda
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates LLP
- Priority: JP2007-202867 20070803
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L27/12 ; H01L23/522 ; H01L21/768
Abstract:
A semiconductor device including n, where notation n denotes a positive integer at least equal to three, conductive layers created as stacked layers on a substrate and connected to each other through a contact pattern, a manufacturing method thereof and a display apparatus thereof are provided.
Public/Granted literature
- US20090032955A1 SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD AND DISPLAY APPARATUS Public/Granted day:2009-02-05
Information query
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