Invention Grant
- Patent Title: SRAM cells with dummy insertions
- Patent Title (中): 具有虚拟插入的SRAM单元
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Application No.: US13594620Application Date: 2012-08-24
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Publication No.: US09053974B2Publication Date: 2015-06-09
- Inventor: Chao-Hsuing Chen , Ling-Sung Wang , Chi-Yen Lin
- Applicant: Chao-Hsuing Chen , Ling-Sung Wang , Chi-Yen Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L27/11 ; H01L27/02
Abstract:
A device includes a first pull-up transistor, a second pull-up transistor, and a dummy gate electrode between the first and the second pull-up transistors. The first and the second pull-up transistors are included in a first Static Random Access Memory (SRAM) cell.
Public/Granted literature
- US20140054716A1 SRAM Cells with Dummy Insertions Public/Granted day:2014-02-27
Information query
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