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US09053932B2 Methods of preparing graphene and device including graphene 有权
制备石墨烯的方法和包括石墨烯的装置

Methods of preparing graphene and device including graphene
Abstract:
A method of preparing graphene includes forming a silicon carbide thin film on a substrate, forming a metal thin film on the silicon carbide thin film, and forming a metal composite layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film.
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