Invention Grant
- Patent Title: Semiconductor device performing stress test
- Patent Title (中): 半导体器件进行压力测试
-
Application No.: US14243183Application Date: 2014-04-02
-
Publication No.: US09053821B2Publication Date: 2015-06-09
- Inventor: Yoshiro Riho , Hiromasa Noda , Kazuki Sakuma
- Applicant: PS4 Luxco S.a.r.l.
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.a.r.l.
- Current Assignee: PS4 Luxco S.a.r.l.
- Current Assignee Address: LU Luxembourg
- Priority: JP2010-260491 20101122
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C29/00 ; G11C29/06 ; G11C29/12 ; G11C29/28 ; G11C29/02 ; G11C29/50 ; G11C29/26

Abstract:
A semiconductor device includes a memory cell array that is divided into a plurality of memory cell mats by a plurality of sense amplifier arrays, and each of the plurality of memory cell mats includes a plurality of word lines and a test circuit for performing a test control to activate, at a time, a plurality of word lines included in each of a plurality of selected memory cell mats that are not disposed adjacent to each other in the plurality of memory cell mats. According to the present invention, the memory cell mats with the plurality of activated word lines are distributed. Therefore, as compared with many word lines activated in one memory cell mat, the load applied to a driver circuit for driving word lines and the load applied to a power supply circuit for supplying an operation voltage to the driver circuit are reduced. As a result, more word lines can be activated at the same time.
Public/Granted literature
- US20140211582A1 Semiconductor Device Performing Stress Test Public/Granted day:2014-07-31
Information query