Invention Grant
- Patent Title: Mode changing circuitry
- Patent Title (中): 模式改变电路
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Application No.: US14549043Application Date: 2014-11-20
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Publication No.: US09053818B2Publication Date: 2015-06-09
- Inventor: Bing Wang , Kuoyuan (Peter) Hsu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/417

Abstract:
A circuit includes a PMOS transistor, an NMOS transistor, and a logic level generation section comprising an input and a logic level output. The PMOS gate receives an input voltage having a voltage level determined based on an operational voltage, the PMOS drain is coupled to the NMOS drain and the input of the logic level generation section, and the PMOS source is coupled to the operational voltage. The NMOS gate receives a voltage that causes the NMOS transistor to have a first driving capability. The first driving capability of the NMOS transistor is less than that of the PMOS transistor if the input voltage has a voltage level greater than a predetermined voltage level.
Public/Granted literature
- US20150078105A1 MODE CHANGING CIRCUITRY Public/Granted day:2015-03-19
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