Invention Grant
- Patent Title: Circuit in dynamic random access memory devices
- Patent Title (中): 动态随机存取存储器件中的电路
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Application No.: US13903376Application Date: 2013-05-28
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Publication No.: US09053815B2Publication Date: 2015-06-09
- Inventor: Debra Bell , Kallol Mazumder
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW Taoyuan
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW Taoyuan
- Agency: WPAT, P.C.
- Agent Anthony King; Kay Yang
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/4076 ; G11C7/10

Abstract:
A circuit in dynamic random access memory devices includes a command extension circuit. The command extension circuit is configured to generate at least one multiple-cycle command signal by lengthening a single-cycle clock command signal from a command decoding circuit. Control logic extends and reduces the multiple-cycle command signal to provide additional functions such as burst length and burst chop. Additional control logic is configured to determine whether a clock signal is enabled in output control logic circuitry according to the multiple-cycle command and logic level generated in the output logic circuitry.
Public/Granted literature
- US20140355361A1 CIRCUIT IN DYNAMIC RANDOM ACCESS MEMORY DEVICES Public/Granted day:2014-12-04
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