Invention Grant
- Patent Title: Non-volatile semiconductor memory device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US14194608Application Date: 2014-02-28
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Publication No.: US09053807B2Publication Date: 2015-06-09
- Inventor: Toshifumi Hashimoto
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2013-180932 20130902
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/26

Abstract:
A non-volatile semiconductor device includes a memory array including a plurality of memory cell transistors electrically connected between bit lines and source lines, wherein the memory array is partitioned into a plurality of memory blocks, and a source line driver configured to set a voltage level of the source lines to a reference voltage level. First and second wirings are respectively connected to a first monitoring position of the source lines and a second monitoring position of the source lines different from the first monitoring position. A selection circuit selects between the first and second monitoring positions. A source line voltage control circuit compares a source line voltage at a selected monitoring position, and outputs a result to the source line driver.
Public/Granted literature
- US20150063027A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2015-03-05
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