Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14062782Application Date: 2013-10-24
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Publication No.: US09053806B2Publication Date: 2015-06-09
- Inventor: Takashi Kono
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2012-234523 20121024
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/26

Abstract:
In this flash memory, after first and second nodes are precharged to a power supply voltage, a sense amplifier is activated, and signals appearing at the first and second nodes are held in a register. With output signals of the register, a transistor is rendered conductive, so that a constant current source for offset compensation is connected to the first or second node. Accordingly, the offset voltage of the sense amplifier can be compensated for with a simple configuration.
Public/Granted literature
- US20140177341A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-06-26
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