The semiconductor device includes a plurality of word lines classified into a plurality of groups and a selection circuit for selecting a word line according to an address. The selection circuit has a level shifter arranged for each of the groups. The address includes a first address for selecting any of the groups and a second address for selecting a word line in the selected group. The selection circuit selects a word line by allowing supply of active potential for word line by the level shifter of a group selected by the first address and further allowing supply of the active potential to the word line selected by the second address out of a plurality of word lines belonging to the selected group.