Invention Grant
US09051664B2 Nanostructuring process for ingot surface, water manufacturing method, and wafer using the same
有权
晶锭表面，晶圆制造方法和使用其的晶片的纳米结构化工艺
- Patent Title: Nanostructuring process for ingot surface, water manufacturing method, and wafer using the same
- Patent Title (中): 晶锭表面，晶圆制造方法和使用其的晶片的纳米结构化工艺
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Application No.: US13353488Application Date: 2012-01-19
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Publication No.: US09051664B2Publication Date: 2015-06-09
- Inventor: Jiunn-Yih Chyan , Jian-Jhih Li , Kun-Lin Yang , Wen-Ching Hsu
- Applicant: Jiunn-Yih Chyan , Jian-Jhih Li , Kun-Lin Yang , Wen-Ching Hsu
- Applicant Address: TW Hsinchu
- Assignee: Sino-American Silicon Products Inc.
- Current Assignee: Sino-American Silicon Products Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Osha Liang LLP
- Priority: TW100103308A 20110128; TW100145551A 20111209
- Main IPC: H01L21/306
- IPC: H01L21/306 ; B82Y30/00 ; H01L29/30 ; C30B33/10 ; C30B29/06 ; C30B33/00
Abstract:
The instant disclosure relates to a nanostructuring process for an ingot surface prior to the slicing operation. A surface treatment step is performed for at least one surface of the ingot in forming a nanostructure layer thereon. The nanostructure layer is capable of enhancing the mechanical strength of the ingot surface to reduce the chipping ratio of the wafer during slicing.
Public/Granted literature
- US20120193764A1 NANOSTRUCTURING PROCESS FOR INGOT SURFACE, WAFER MANUFACTURING METHOD, AND WAFER USING THE SAME Public/Granted day:2012-08-02
Information query
IPC分类:
