Invention Grant
- Patent Title: Silicon single crystal production method
- Patent Title (中): 硅单晶生产方法
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Application No.: US13189645Application Date: 2011-07-25
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Publication No.: US09051661B2Publication Date: 2015-06-09
- Inventor: Shinichi Kyufu
- Applicant: Shinichi Kyufu
- Applicant Address: DE Munich
- Assignee: Siltronic AG
- Current Assignee: Siltronic AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: JP2010-178014 20100806
- Main IPC: C30B15/20
- IPC: C30B15/20 ; C30B15/22 ; C30B29/06 ; C30B15/28 ; C30B15/30 ; C30B30/04

Abstract:
Silicon single crystals having suppressed deformation and dislocations and the successful omission of the tail section are produced by growing the straight-body section of the silicon single crystal under the influence of a horizontal magnetic field with a magnetic flux density at its magnetic center being ≧1000 Gauss, and ≦2000 Gauss, reducing the lifting speed of the silicon single crystal relative to the surface of the melt to 0 mm/minute, maintaining a static state until there is a decrease in the apparent weight of the silicon single crystal, then further maintaining the static state so that the entire growth front of the silicon single crystal forms a convex shape protruding in a direction opposite to the lifting direction of the silicon single crystal, and separating the silicon single crystal from the melt.
Public/Granted literature
- US20120031323A1 Silicon Single Crystal Production Method Public/Granted day:2012-02-09
Information query
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