Invention Grant
- Patent Title: Radio frequency power amplifier with linearizing predistorter
- Patent Title (中): 带线性预失真器的射频功率放大器
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Application No.: US13397917Application Date: 2012-02-16
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Publication No.: US09048802B2Publication Date: 2015-06-02
- Inventor: Hamid R. Amir Firouzkouhi , Bipul Agarwal , Hasan Akyol
- Applicant: Hamid R. Amir Firouzkouhi , Bipul Agarwal , Hasan Akyol
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H04B1/04
- IPC: H04B1/04 ; H03F3/16 ; H03G3/30
Abstract:
A power amplifier circuit includes an amplifier MOSFET and a predistorter MOSFET. The predistorter MOSFET source and drain are connected together, and the predistorter MOSFET is connected between the gate of the amplifier MOSFET and a second bias voltage signal. This biasing of the predistorter MOSFET causes it to provide a nonlinear capacitance at the gate of the amplifier MOSFET. The combined non-linear capacitances of the amplifier MOSFET and predistorter MOSFET provide predistortion that promotes cancellation of the distortion or nonlinearity contributed by the amplifier MOSFET alone.
Public/Granted literature
- US20120149316A1 RADIO FREQUENCY POWER AMPLIFIER WITH LINEARIZING PREDISTORTER Public/Granted day:2012-06-14
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