Invention Grant
US09048629B2 Semiconductor device having a vertical cavity surface emitting laser (VCSEL) and a protection diode integrated therein and having reduced capacitance to allow the VCSEL to achieve high operating speeds
有权
具有垂直腔表面发射激光器（VCSEL）和集成在其中的保护二极管的半导体器件具有降低的电容以允许VCSEL实现高工作速度
- Patent Title: Semiconductor device having a vertical cavity surface emitting laser (VCSEL) and a protection diode integrated therein and having reduced capacitance to allow the VCSEL to achieve high operating speeds
- Patent Title (中): 具有垂直腔表面发射激光器（VCSEL）和集成在其中的保护二极管的半导体器件具有降低的电容以允许VCSEL实现高工作速度
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Application No.: US13925324Application Date: 2013-06-24
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Publication No.: US09048629B2Publication Date: 2015-06-02
- Inventor: Ramana Murty
- Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/183 ; H01L25/16 ; H01S5/026 ; H01S5/068 ; H01S5/042
Abstract:
A semiconductor device is provided that has a VCSEL and a protection diode integrated therein and that has an additional intrinsic layer. The inclusion of the additional intrinsic layer increases the width of the depletion region of the protection diode, which reduces the amount of capacitance that is introduced by the protection diode. Reducing the amount of capacitance that is introduced by the protection diode allows the VCSEL to operate at higher speeds.
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