Invention Grant
US09048413B2 Semiconductor magnetoresistive random-access memory (MRAM) device and manufacturing method thereof
有权
半导体磁阻随机存取存储器（MRAM）器件及其制造方法
- Patent Title: Semiconductor magnetoresistive random-access memory (MRAM) device and manufacturing method thereof
- Patent Title (中): 半导体磁阻随机存取存储器（MRAM）器件及其制造方法
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Application No.: US14301072Application Date: 2014-06-10
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Publication No.: US09048413B2Publication Date: 2015-06-02
- Inventor: Xian Cheng Zeng
- Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION , SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Applicant Address: CN
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee Address: CN
- Agency: Innovation Counsel LLP
- Priority: CN201110360297 20111115
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/02 ; H01L43/08 ; H01L43/12
Abstract:
The present disclosure describes a semiconductor MRAM device and a manufacturing method. The device reduces magnetic field induction “interference” (disturbance) phenomenon between adjacent magnetic tunnel junctions when data is written and read. This semiconductor MRAM device comprises a magnetic tunnel junction unit and a magnetic shielding material layer covering the sidewalls of the magnetic tunnel junction unit. The method for manufacturing a semiconductor device comprises: forming a magnetic tunnel junction unit, depositing an isolation dielectric layer to cover the top and the sidewall of the magnetic tunnel junction unit, and depositing a magnetic shielding material layer on the isolation dielectric layer.
Public/Granted literature
- US20140291789A1 SEMICONDUCTOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-10-02
Information query
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