Invention Grant
- Patent Title: Nitride semiconductor structure and semiconductor light emitting device including the same
- Patent Title (中): 氮化物半导体结构和包括其的半导体发光器件
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Application No.: US13963104Application Date: 2013-08-09
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Publication No.: US09048364B2Publication Date: 2015-06-02
- Inventor: Chi-Feng Huang , Ching-Liang Lin , Shen-Jie Wang , Jyun-De Wu , Yu-Chu Li , Chun-Chieh Lee
- Applicant: GENESIS PHOTONICS INC.
- Applicant Address: TW Tainan
- Assignee: Genesis Photonics Inc.
- Current Assignee: Genesis Photonics Inc.
- Current Assignee Address: TW Tainan
- Agency: Rosenberg, Klein & Lee
- Priority: TW101143115A 20121119
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L33/06 ; H01L33/02 ; H01L33/14 ; H01L33/32
Abstract:
A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1−xN (0
Public/Granted literature
- US20140138616A1 NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME Public/Granted day:2014-05-22
Information query
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