Invention Grant
- Patent Title: Display device having an oxide semiconductor transistor
- Patent Title (中): 具有氧化物半导体晶体管的显示装置
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Application No.: US13944996Application Date: 2013-07-18
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Publication No.: US09048325B2Publication Date: 2015-06-02
- Inventor: Toshikazu Kondo , Jun Koyama , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2010-042584 20100226
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L29/786 ; G02F1/1362 ; H01L29/45 ; H01L27/12 ; G02F1/136

Abstract:
An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.
Public/Granted literature
- US20130299825A1 DISPLAY DEVICE HAVING AN OXIDE SEMICONDUCTOR TRANSISTOR Public/Granted day:2013-11-14
Information query
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