Invention Grant
US09048260B2 Method of forming a semiconductor device with tall fins and using hard mask etch stops
有权
用高散热片形成半导体器件并使用硬掩模蚀刻停止件的方法
- Patent Title: Method of forming a semiconductor device with tall fins and using hard mask etch stops
- Patent Title (中): 用高散热片形成半导体器件并使用硬掩模蚀刻停止件的方法
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Application No.: US13997161Application Date: 2011-12-31
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Publication No.: US09048260B2Publication Date: 2015-06-02
- Inventor: Ritesh Jhaveri , Bernard Sell , Tahir Ghani
- Applicant: Ritesh Jhaveri , Bernard Sell , Tahir Ghani
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- International Application: PCT/US2011/068269 WO 20111231
- International Announcement: WO2013/101237 WO 20130704
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L21/8234 ; H01L21/8238 ; H01L29/78
Abstract:
A hard mask etch stop is formed on the top surface of tall fins to preserve the fin height and protect the top surface of the fin from damage during etching steps of the transistor fabrication process. In an embodiment, the hard mask etch stop is formed using a dual hard mask system, wherein a hard mask etch stop layer is formed over the surface of a substrate, and a second hard mask layer is used to pattern a fin with a hard mask etch stop layer on the top surface of the fin. The second hard mask layer is removed, while the hard mask etch stop layer remains to protect the top surface of the fin during subsequent fabrication steps.
Public/Granted literature
- US20140191300A1 HARD MASK ETCH STOP FOR TALL FINS Public/Granted day:2014-07-10
Information query
IPC分类:
