Invention Grant
- Patent Title: Semiconductor that has a functionalized surface
- Patent Title (中): 具有功能化表面的半导体
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Application No.: US13578470Application Date: 2011-02-16
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Publication No.: US09048188B2Publication Date: 2015-06-02
- Inventor: Stephen Maldonado , Jhindan Mukherjee
- Applicant: Stephen Maldonado , Jhindan Mukherjee
- Applicant Address: US MI Ann Arbor
- Assignee: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
- Current Assignee Address: US MI Ann Arbor
- Agency: Howard & Howard Attorneys PLLC
- International Application: PCT/US2011/025079 WO 20110216
- International Announcement: WO2011/103187 WO 20110825
- Main IPC: C23C18/00
- IPC: C23C18/00 ; C23C20/00 ; C23C24/00 ; H01L21/306 ; C23C22/05 ; C23C18/18 ; C30B29/40 ; C30B33/00 ; C23C22/17 ; C23C18/20 ; C23C22/14 ; H01L21/02

Abstract:
This invention provides a semiconductor having a functionalized surface that is resistant to oxidation and that includes a plurality of atoms of a Group III element bonded to organic groups. The functionalized surface has less than or equal to about 1 atom of the Group III element bonded to an oxygen atom per every 1,000 atoms of the Group III element bonded to the organic groups, as determined using X-ray photoelectron spectroscopy. This invention also provides a method of functionalizing the surface and includes the step of halogenating at least one of the plurality of atoms of the Group III element to form halogenated Group III element atoms. The method also includes the step of reacting at least one of the halogenated Group III element atoms with a Grignard reagent to form a bond between the at least one Group III element atom and the organic groups.
Public/Granted literature
- US20130035498A1 SEMICONDUCTOR THAT HAS A FUNCTIONALIZED SURFACE Public/Granted day:2013-02-07
Information query
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