Invention Grant
- Patent Title: Method for manufacturing silicon carbide semiconductor device
- Patent Title (中): 碳化硅半导体器件的制造方法
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Application No.: US13767573Application Date: 2013-02-14
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Publication No.: US09048093B2Publication Date: 2015-06-02
- Inventor: Taku Horii
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; Tamatane J. Aga
- Priority: JP2012-063035 20120321
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/02 ; H01L21/20 ; H01L29/66 ; H01L29/78 ; H01L21/683
Abstract:
A single crystal substrate made of silicon carbide and a first support substrate having a size greater than a size of each of the single crystal substrates are prepared. The single crystal substrate is bonded onto the first support substrate. Process on the single crystal substrate bonded to the first support substrate is performed. The first support substrate is removed. The single crystal substrate is subjected to heat treatment. The single crystal substrate is bonded onto a second support substrate having a size greater than the size of the single crystal substrate. Process on the single crystal substrate bonded to the second support substrate is performed.
Public/Granted literature
- US20130252400A1 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2013-09-26
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