Invention Grant
- Patent Title: Semiconductor element and method of manufacturing same
- Patent Title (中): 半导体元件及其制造方法
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Application No.: US13845078Application Date: 2013-03-17
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Publication No.: US09048090B2Publication Date: 2015-06-02
- Inventor: Takako Chinone , Mamoru Miyachi , Tatsuma Saito , Takanobu Akagi
- Applicant: STANLEY ELECTRIC CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: STANLEY ELECTRIC CO., LTD.
- Current Assignee: STANLEY ELECTRIC CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz, Goodman & Chick PC
- Priority: JP2012-061834 20120319
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/02 ; H01L29/45 ; H01L23/00 ; H01L33/00 ; H01L33/64
Abstract:
A method of manufacturing a semiconductor element includes forming a first bonding layer containing a metal, which forms a eutectic crystal with Au, on a first substrate to provide a first laminated body. The method also includes forming an element structure layer having a semiconductor layer on a second substrate. The method also includes forming a second bonding layer on the element structure layer to provide a second laminated body. The second bonding layer has a metal underlayer containing a metal, which forms a eutectic crystal with Au. The second bonding layer also has a surface layer that contains Au. The method also includes performing heating pressure-bonding on the first and second laminated bodies with the first and second bonding layers facing each other. The heating temperature of the second substrate in the heating pressure-bonding is higher than the heating temperature of the first substrate.
Public/Granted literature
- US20130241061A1 SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING SAME Public/Granted day:2013-09-19
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