Invention Grant
US09047892B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor having an antiparallel free (APF) structure with improved magnetic stability
有权
具有改进的磁稳定性的具有反平行自由（APF）结构的电流垂直平面（CPP）磁阻（MR）传感器
- Patent Title: Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor having an antiparallel free (APF) structure with improved magnetic stability
- Patent Title (中): 具有改进的磁稳定性的具有反平行自由（APF）结构的电流垂直平面（CPP）磁阻（MR）传感器
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Application No.: US14062800Application Date: 2013-10-24
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Publication No.: US09047892B2Publication Date: 2015-06-02
- Inventor: Jeffrey R. Childress , John Creighton Read , Yang Li
- Applicant: HGST Netherlands B.V.
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agent Thomas R. Berthold
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A current-perpendicular-to-the-plane magnetoresistive sensor has an antiparallel free (APF) structure and soft side shields wherein the upper free layer (FL2) of the APF structure is magnetically coupled antiparallel to the top shield and a top shield seed layer via a nonmagnetic antiparallel coupling (APC) layer. In one embodiment the antiparallel coupling is through an antiferromagnetic-coupling (AFC) layer that provides a dominant antiferromagnetic indirect exchange coupling of FL2 to the top shield. In another embodiment the antiparallel coupling is by an APC layer that decouples FL2 and the top shield and causes the edge-induced magnetostatic coupling between FL2 and the seed layer to dominate. The degree of coupling is controlled by the composition and thickness of the nonmagnetic APC layer between FL2 and the seed layer, and by the thickness of the seed layer.
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