Invention Grant
US09046765B2 Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film
有权
抗蚀剂图案形成方法，抗蚀剂图案形成辐射敏感性树脂组合物和抗蚀剂膜
- Patent Title: Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film
- Patent Title (中): 抗蚀剂图案形成方法，抗蚀剂图案形成辐射敏感性树脂组合物和抗蚀剂膜
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Application No.: US14037659Application Date: 2013-09-26
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Publication No.: US09046765B2Publication Date: 2015-06-02
- Inventor: Hiromitsu Nakashima , Toru Kimura , Yusuke Asano , Masafumi Hori , Reiko Kimura , Kazuki Kasahara , Hiromu Miyata , Masafumi Yoshida
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-081331 20110331
- Main IPC: G03F7/004
- IPC: G03F7/004 ; C08F12/20 ; H01L21/027 ; C08F220/22 ; C08F220/24 ; C08F220/28 ; G03F7/20 ; G03F7/039 ; G03F7/11
Abstract:
A resist pattern-forming method includes providing a resist film having a surface free energy of 30 to 40 mN/m on a substrate using a radiation-sensitive resin composition. The resist film is exposed by applying radiation via a mask. The exposed resist film is developed. It is preferable that the exposing of the resist film includes exposing the resist film via an immersion liquid that is provided over the resist film.
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