Invention Grant
- Patent Title: Thin film transistor substrate and method for fabricating the same
- Patent Title (中): 薄膜晶体管基板及其制造方法
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Application No.: US12969053Application Date: 2010-12-15
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Publication No.: US09046714B2Publication Date: 2015-06-02
- Inventor: Han-Jin Ahn , Su-Hyun Park
- Applicant: Han-Jin Ahn , Su-Hyun Park
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Brinks Gilson & Lione
- Priority: KR10-2009-0129103 20091222
- Main IPC: G02F1/1337
- IPC: G02F1/1337 ; H01L27/12

Abstract:
The present invention relates to a thin film transistor substrate and a method for fabricating the same, which can shorten a process time, prevent a scratch from taking place at an alignment film, and increase black luminance. The thin film transistor substrate includes a thin film transistor formed on a substrate, a protective film formed to flatten a step of the thin film transistor and have an uneven surface with repetitive projected patterns and recessed patterns, a pixel electrode formed on the protective film to maintain an uneven shape of the protective film, and an alignment film formed both on the protective film and the pixel electrode to maintain the uneven shapes of the protective film and the pixel electrode.
Public/Granted literature
- US20110147743A1 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2011-06-23
Information query
IPC分类: