Invention Grant
- Patent Title: Method of inspecting wafer
- Patent Title (中): 检查晶圆的方法
-
Application No.: US13785307Application Date: 2013-03-05
-
Publication No.: US09036895B2Publication Date: 2015-05-19
- Inventor: Young-hoon Sohn , Yu-sin Yang , Sang-kil Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2012-0049778 20120510
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G06T7/00

Abstract:
A method of inspecting a wafer includes performing a fabricating process on a wafer, irradiating broadband light on the wafer, such that the light is reflected from the wafer, generating a spectral cube by using the light reflected from the wafer, extracting a spectrum of a desired wafer inspection region from the spectral cube, and inspecting the desired wafer inspection region by analyzing the extracted spectrum.
Public/Granted literature
- US20130301903A1 METHOD OF INSPECTING WAFER Public/Granted day:2013-11-14
Information query