Invention Grant
US09036772B2 Mirror for the EUV wavelength range, projection objective for microlithography comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective
有权
EUV波长范围的镜面，包含这种反射镜的微光刻的投影物镜，以及用于微光刻的投影曝光装置，包括这样的投影物镜
- Patent Title: Mirror for the EUV wavelength range, projection objective for microlithography comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective
- Patent Title (中): EUV波长范围的镜面，包含这种反射镜的微光刻的投影物镜，以及用于微光刻的投影曝光装置，包括这样的投影物镜
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Application No.: US12756456Application Date: 2010-04-08
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Publication No.: US09036772B2Publication Date: 2015-05-19
- Inventor: Aurelian Dodoc
- Applicant: Aurelian Dodoc
- Applicant Address: DE Oberkochen
- Assignee: Carl Zeiss SMT GmbH
- Current Assignee: Carl Zeiss SMT GmbH
- Current Assignee Address: DE Oberkochen
- Agency: Edell, Shapiro & Finnan, LLC
- Priority: DE102009017096 20090415
- Main IPC: G02B1/10
- IPC: G02B1/10 ; G02B17/06 ; G02B5/08 ; G03F7/20
Abstract:
A mirror for the EUV wavelength range (1) having a layer arrangement (P) applied on a substrate (S), the layer arrangement having a periodic sequence of individual layers, where the periodic sequence has at least two individual layers—forming a period—composed respectively of silicon (Si) and ruthenium (Ru). Also disclosed are a projection objective for microlithography (2) including such a mirror, and a projection exposure apparatus for microlithography having such a projection objective (2).
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