Invention Grant
US09036419B2 3D stacked NAND flash memory array having SSL status check buildings for monitoring threshold voltages of string selection transistors and methods for monitoring and operating the same
有权
具有用于监视串选择晶体管的阈值电压的SSL状态检查建筑物的3D堆叠NAND闪存阵列及其监视和操作方法
- Patent Title: 3D stacked NAND flash memory array having SSL status check buildings for monitoring threshold voltages of string selection transistors and methods for monitoring and operating the same
- Patent Title (中): 具有用于监视串选择晶体管的阈值电压的SSL状态检查建筑物的3D堆叠NAND闪存阵列及其监视和操作方法
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Application No.: US14185399Application Date: 2014-02-20
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Publication No.: US09036419B2Publication Date: 2015-05-19
- Inventor: Byung-Gook Park , Wandong Kim , Pil-Jong Kim , Seon-Ick Sohn
- Applicant: Seoul National University R&DB FOUNDATION
- Applicant Address: KR
- Assignee: Seoul National University R&DB FOUNDATION
- Current Assignee: Seoul National University R&DB FOUNDATION
- Current Assignee Address: KR
- Agent Gerald E. Hespos; Michael J. Porco; Matthew T. Hespos
- Priority: KR10-2013-0018146 20130220
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10
Abstract:
Disclosed is a 3D stacked NAND flash memory array having SSL status check buildings for monitoring threshold voltages of string selection transistors, a monitoring method of threshold voltages of string selection transistors by the SSL status check buildings, and an operating method thereof.
Public/Granted literature
Information query
