Invention Grant
US09036418B2 Read voltage generation circuit, memory and memory system including the same
有权
读电压生成电路，存储器和存储器系统包括相同
- Patent Title: Read voltage generation circuit, memory and memory system including the same
- Patent Title (中): 读电压生成电路，存储器和存储器系统包括相同
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Application No.: US13745272Application Date: 2013-01-18
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Publication No.: US09036418B2Publication Date: 2015-05-19
- Inventor: Seung-Min Oh
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2012-0033358 20120330
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/26 ; G11C11/56 ; G11C16/16
Abstract:
A read voltage generation circuit includes a register unit configured to store an initial read voltage code, a counter circuit configured to change a read voltage code in every read-retry operation, wherein an initial value of the read voltage code is the initial read voltage code; and a voltage generation circuit configured to generate a read voltage corresponding to a read voltage code produced by the counter circuit.
Public/Granted literature
- US20130258778A1 READ VOLTAGE GENERATION CIRCUIT, MEMORY AND MEMORY SYSTEM INCLUDING THE SAME Public/Granted day:2013-10-03
Information query
