Invention Grant
- Patent Title: Variability and aging sensor for integrated circuits
- Patent Title (中): 集成电路的可变性和老化传感器
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Application No.: US14157009Application Date: 2014-01-16
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Publication No.: US09035706B2Publication Date: 2015-05-19
- Inventor: Min Chen , Vijay Kumar Reddy
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank Cimino
- Main IPC: H03K3/03
- IPC: H03K3/03 ; G01R31/28 ; G01R31/317

Abstract:
A ring-oscillator-based on-chip sensor (OCS) includes a substrate having a semiconductor surface upon which the OCS is formed. The OCS includes an odd number of digital logic stages formed in and on the semiconductor surface including a first stage and a last stage each including at least one NOR gate including a first gate stack and/or a NAND gate including a second gate stack. A feedback connection is from an output of the last stage to an input of the first stage. At least one discharge path including at least a first p-channel metal-oxide semiconductor (PMOS) device is coupled between the first gate stack and a ground pad, and/or at least one charge path including at least a first n-channel metal-oxide semiconductor (NMOS) device is coupled between the second gate stack a power supply pad.
Public/Granted literature
- US20140197895A1 VARIABILITY AND AGING SENSOR FOR INTEGRATED CIRCUITS Public/Granted day:2014-07-17
Information query
IPC分类: