Invention Grant
- Patent Title: Method for manufacturing a semiconductor substrate
- Patent Title (中): 半导体衬底的制造方法
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Application No.: US12793515Application Date: 2010-06-03
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Publication No.: US09035474B2Publication Date: 2015-05-19
- Inventor: Carlos Mazure , Richard Ferrant , Konstantin Bourdelle , Bich-Yen Nguyen
- Applicant: Carlos Mazure , Richard Ferrant , Konstantin Bourdelle , Bich-Yen Nguyen
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: EP10290181 20100406
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L21/762 ; H01L21/18 ; H01L21/20
Abstract:
The invention relates to a method for manufacturing a semiconductor substrate, in particular, a semiconductor-on-insulator substrate by providing a donor substrate and a handle substrate, forming a pattern of one or more doped regions typically inside the handle substrate, and then attaching such as by molecular bonding the donor substrate and the handle substrate to obtain a donor-handle compound.
Public/Granted literature
- US20110241157A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE Public/Granted day:2011-10-06
Information query
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