Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12272001Application Date: 2008-11-17
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Publication No.: US09035455B2Publication Date: 2015-05-19
- Inventor: Katsumi Sameshima
- Applicant: Katsumi Sameshima
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2007-298361 20071116
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/525 ; H01L23/00

Abstract:
A semiconductor device includes a semiconductor chip, a wiring formed on the semiconductor chip, a passivation film coating the wiring and having an opening for partially exposing the wiring from the passivation film an interposing film formed on a portion of the wiring and facing the opening, and a post bump raisedly formed on the interposing film and with a peripheral edge portion thereof protruding away from the opening more than a peripheral edge of the interposing film in a direction parallel to a surface of the passivation film.
Public/Granted literature
- US20090127709A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-05-21
Information query
IPC分类: