Invention Grant
- Patent Title: Method for manufacturing an electrooptical device
- Patent Title (中): 电光装置的制造方法
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Application No.: US13438875Application Date: 2012-04-04
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Publication No.: US09035314B2Publication Date: 2015-05-19
- Inventor: Shunpei Yamazaki , Jun Koyama
- Applicant: Shunpei Yamazaki , Jun Koyama
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP11-084736 19990326
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/28 ; H01L27/12 ; G02F1/13 ; G02F1/1345 ; H01L29/49 ; G02F1/1362
Abstract:
An object of the present invention is to provide an electrooptical device having high operation performance and reliability, and a method of manufacturing the electrooptical device.Lov region 207 is disposed in n-channel TFT 302 that comprises a driver circuit, and a TFT structure which is resistant to hot carriers is realized. Loff regions 217 to 220 are disposed in n-channel TFT 304 that comprises a pixel section, and a TFT structure of low off current is realized. An input-output signal wiring 305 and gate wiring 306 are formed by laminating a first wiring and a second wiring having lower resistivity than the first wiring, and wiring resistivity is steeply reduced.
Public/Granted literature
- US20120187837A1 METHOD FOR MANUFACTURING AN ELECTROOPTICAL DEVICE Public/Granted day:2012-07-26
Information query
IPC分类:
