Invention Grant
- Patent Title: Coalesced nanowire structures with interstitial voids and method for manufacturing the same
- Patent Title (中): 具有间隙空隙的聚结纳米线结构及其制造方法
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Application No.: US13626286Application Date: 2012-09-25
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Publication No.: US09035278B2Publication Date: 2015-05-19
- Inventor: Patrik Svensson , Linda Romano , Sungsoo Yi , Olga Kryliouk , Ying-Lan Chang
- Applicant: GLO AB
- Applicant Address: SE Lund
- Assignee: GLO AB
- Current Assignee: GLO AB
- Current Assignee Address: SE Lund
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L33/18 ; H01L33/24 ; H01L29/41 ; H01L33/06 ; H01L33/08

Abstract:
A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer.
Public/Granted literature
- US20130075693A1 COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-03-28
Information query
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