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US09035278B2 Coalesced nanowire structures with interstitial voids and method for manufacturing the same 有权
具有间隙空隙的聚结纳米线结构及其制造方法

Coalesced nanowire structures with interstitial voids and method for manufacturing the same
Abstract:
A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer.
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