Invention Grant
US09034706B2 FinFETs with regrown source/drain and methods for forming the same
有权
具有再生长源/漏极的FinFET，以及形成其的方法
- Patent Title: FinFETs with regrown source/drain and methods for forming the same
- Patent Title (中): 具有再生长源/漏极的FinFET，以及形成其的方法
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Application No.: US13866925Application Date: 2013-04-19
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Publication No.: US09034706B2Publication Date: 2015-05-19
- Inventor: Eric Chih-Fang Liu , Tzu-Wei Kao , Ryan Chia-Jen Chen , Chao-Cheng Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/78 ; H01L29/66
Abstract:
A method includes etching a semiconductor substrate to form a recess in the semiconductor substrate, and reacting a surface layer of the semiconductor substrate to generate a reacted layer. The surface layer of the semiconductor substrate is in the recess. The reacted layer is then removed. An epitaxy is performed to grow a semiconductor material in the recess.
Public/Granted literature
- US20140273380A1 FinFETs with Regrown Source/Drain and Methods for Forming the Same Public/Granted day:2014-09-18
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