Invention Grant
US09025382B2 Lithography-friendly local read circuit for NAND flash memory devices and manufacturing method thereof
有权
用于NAND闪存器件的平版印刷版本本地读取电路及其制造方法
- Patent Title: Lithography-friendly local read circuit for NAND flash memory devices and manufacturing method thereof
- Patent Title (中): 用于NAND闪存器件的平版印刷版本本地读取电路及其制造方法
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Application No.: US13829436Application Date: 2013-03-14
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Publication No.: US09025382B2Publication Date: 2015-05-05
- Inventor: Hyoung Seub Rhie
- Applicant: Conversant Intellectual Property Management Inc.
- Applicant Address: US TX Plano
- Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee Address: US TX Plano
- Agency: Conley Rose, P.C.
- Agent J. Robert Brown, Jr.
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/26 ; G11C16/10 ; G11C7/18 ; G11C16/08 ; G11C16/24 ; H01L27/115 ; H01L27/02
Abstract:
A flash memory device comprising a local sensing circuitry is provided in a hierarchical structure with local and global bit lines. The local sensing circuitry comprise read and pass circuits configured to sense and amplify read currents during read operations, wherein the amplified read signals may be passed to a global circuit via the local and global bit lines.
Public/Granted literature
- US20140269087A1 Lithography-friendly Local Read Circuit for NAND Flash Memory Devices and Manufacturing Method Thereof Public/Granted day:2014-09-18
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