Invention Grant
- Patent Title: Selective self-reference read
- Patent Title (中): 选择性自我参考阅读
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Application No.: US13804598Application Date: 2013-03-14
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Publication No.: US09025364B2Publication Date: 2015-05-05
- Inventor: Wayne Kinney , Gurtej S. Sandhu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16

Abstract:
This disclosure relates to selectively performing a read with increased accuracy, such as a self-reference read, from a memory. In one aspect, data is read from memory cells, such as magnetoresitive random access memory (MRAM) cells, of a memory array. In response to detecting a condition associated with reading from the memory cells, a self-reference read can be performed from at least one of the memory cells. For instance, the condition can indicate that data read from the memory cells is uncorrectable via decoding of error correction codes (ECC). Selectively performing self-reference reads can reduce power consumption and/or latency associated with reading from the memory compared to always performing self-reference reads.
Public/Granted literature
- US20140269029A1 SELECTIVE SELF-REFERENCE READ Public/Granted day:2014-09-18
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