Invention Grant
- Patent Title: Memory device and electronic apparatus
- Patent Title (中): 存储设备和电子设备
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Application No.: US13585035Application Date: 2012-08-14
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Publication No.: US09025363B2Publication Date: 2015-05-05
- Inventor: Junichi Sato
- Applicant: Junichi Sato
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Staas & Halsey LLP
- Priority: JP2011-229919 20111019
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16
Abstract:
A memory device includes: a memory including a first magnetic layer having no retaining force and a second magnetic layer having a retaining force, the first magnetic layer and the second magnetic layer being stacked; a first magnet to magnetize the first magnetic layer in a first direction; and a second magnet to apply a magnetic field to a region through which the memory passes when the memory is removed and to magnetize the second magnetic layer in a second direction.
Public/Granted literature
- US20130100733A1 MEMORY DEVICE AND ELECTRONIC APPARATUS Public/Granted day:2013-04-25
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