Invention Grant
US09025360B2 Method for improving data retention of ReRAM chips operating at low operating temperatures
有权
提高在低工作温度下工作的ReRAM芯片数据保留的方法
- Patent Title: Method for improving data retention of ReRAM chips operating at low operating temperatures
- Patent Title (中): 提高在低工作温度下工作的ReRAM芯片数据保留的方法
-
Application No.: US14137893Application Date: 2013-12-20
-
Publication No.: US09025360B2Publication Date: 2015-05-05
- Inventor: Dipankar Pramanik , Tony P. Chiang
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: G11C7/00
- IPC: G11C7/00 ; H01L45/00 ; G11C13/00 ; H01L21/66 ; H01L27/24
Abstract:
Programming a resistive memory structure at a temperature well above the operating temperature can create a defect distribution with higher stability, leading to a potential improvement of the retention time. The programming temperature can be up to 100 C above the operating temperature. The memory chip can include embedded heaters in the chip package, allowing for heating the memory cells before the programming operations.
Public/Granted literature
- US20140269004A1 Method for Improving Data Retention of ReRAM Chips Operating at Low Operating Temperatures Public/Granted day:2014-09-18
Information query
