Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13681355Application Date: 2012-11-19
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Publication No.: US09024366B2Publication Date: 2015-05-05
- Inventor: Jong Il Kim
- Applicant: SK Hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2012-0076221 20120712
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/322 ; H01L21/265 ; H01L23/48
Abstract:
A semiconductor device having a dummy active region for metal ion gathering, which is capable of preventing device failure due to metal ion contamination, and a method of fabricating the same are provided. The semiconductor device includes active regions defined by an isolation layer in a semiconductor substrate and ion-implanted with an impurity, and a dummy active region ion-implanted with an impurity having a concentration higher than that of the impurity in the active region and configured to gather metal ions.
Public/Granted literature
- US20140015018A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-01-16
Information query
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